2 edition of Gallium arsenide thin films on tungsten/graphite substrates found in the catalog.
Gallium arsenide thin films on tungsten/graphite substrates
Southern Methodist University
1978 by Dept. of Energy, for sale by the National Technical Information Service in [Washington], Springfield, Va .
Written in English
|Series||SAN ; 1284-T 2|
|Contributions||Chu, Shirley S, United States. Dept. of Energy|
|The Physical Object|
Thin wafers of the semiconductors silicon and gallium arsenide are widely used as substrates in the production of integrated circuits, while single-crystal sheets of aluminum oxide, also known as sapphire, serve as insulating substrates for the production of silicon-on-sapphire chip designs. Single crystal semiconductors may also be used in the.
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Gallium arsenide thin films on tungsten/graphite substrates. [Washington]: Dept. of Energy ; Springfield, Va.: For sale by the National Technical Information Service, (OCoLC) Material Type: Government publication, National government publication: Document Type: Book: All Authors / Contributors: Shirley S Chu; Southern Methodist University.
Polycrystalling gallium arsenide films deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsine have been used for the fabrication of MOS‐type solar cells. The deposited films were oxidized i n s i t u with an argon‐oxygen mixture and, in some cases, followed by a water‐vapor by: Polycrystalling gallium arsenide films deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsine have been used for the fabrication of MOS-type solar cells.
The deposited films were oxidized in situ with an argon-oxygen mixture and, in some cases, followed by a water-vapor by: Gallium arsenide films have been deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsine in a hydrogen flow system.
Polycrystalline gallium arsenide films deposited on tungsten/graphite substrates have been used for the fabrication of thin film solar cells. Gallium arsenide films deposited on foreign substrates of 10 microns or less thickness exhibit, in most cases, pronounced shunting effects due to grain boundaries.
The objectives of the first part are concerned with the deposition of gallium arsenide films on foreign substrates and the fabrication and characterization of thin film gallium arsenide solar cells. Tungsten coated graphite was selected as the substrate for the deposition of gallium : H.
Yang. Thin Solid Films -Elsevier Sequoia, S.A., Lausanne-Printed in Switzerland 31 NUCLEATION STUDIES OF GALLIUM ARSENIDE ON () TUNGSTEN S. OWEN, G. STEVENSON AND B. TUCK Department of Electrical and Electronic Engineering, University of Nottingham, University Park, Nottingham NG7 2RD (Gt.
Britain) (Received July 8, ; in revised form September 9, ) Cited by: 2. Polycrystalling gallium arsenide films deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsine have been used for the fabrication of MOS‐type solar cells.
Gallium arsenide films have been deposited on tungsten-coated graphite substrates by the reaction of gallium, hydrogen chloride, and arsine in a hydrogen flow.
It has been found that the presence of hydrogen chloride in the gallium monochloride-arsenic mixture is essential in obtaining large-area gallium arsenide films with sufficiently good microstructure suitable for photovoltaic by: Polycrystalline gallium arsenide thin films were deposited on tungsten-coated graphite substrates by the reaction of gallium, hydrogen chloride, and arsine in a hydrogen flow system.
Abstract Polycrystalline gallium arsenide thin films were deposited on tungsten-coated graphite substrates by the reaction of gallium, hydrogen chloride, and arsine in a hydrogen flow system. The deposited films were used for the fabrication of MOS type solar cells.
Thin films of gallium arsenide deposited on tungsten-coated graphite substrates were used for the fabrication of MOS type solar cells. Graphite was selected as a substrate but due to the high electrical resistance of the gallium arsenide/graphite interface, a tungsten interlayer was used to minimize the resistance.
Polycrystalline gallium arsenide films of μm thickness deposited on tungsten/graphite substrates by the reaction between gallium, hydrogen chloride, and arsine have been used for the fabrication of thin-film homojunction solar by: 5.
Abstract MOS solar cells have been fabricated from gallium arsenide films of 10 microns thickness deposited on tungsten coated graphite substrates. The deposition of gallium arsenide films was carried out by the reaction between gallium, hydrogen chloride, and arsine in a hydrogen flow system.
Gallium arsenide films have been deposited on tungsten/graphite substrates at /sup 0/C by the reaction of gallium, hydrogen chloride, and arsine in a gas flow system.
The deposited films are essentially polycrystalline with an average crystallite size of about mu.m. Conclusions In summary, we have outlined the role of inter- face reactions that make successful heteroepitaxy of gallium arsenide thin films on molybdenum substrates difficult.
On the other hand, we have demonstrated that reactions with molybdenum substrates can be favorable for grain growth processes at elevated by: 2. Polycrystalline gallium arsenide films deposited on tungsten/graphite substrates have been used for the fabrication of thin film solar cells.
Gallium arsenide films deposited on foreign substrates of mu.m or less thickness exhibit, in most cases, pronounced shunting effects due to grain boundaries. Silicon and gallium-arsenide substrates were used. A thin layer of tungsten was deposited on the substrates as a diffusion barrier prior to the deposition of Au thin films.
The measured thermal expansion coefficients of the thermally evaporated Au thin film ranges from to p.p.m. °C −1, while that of bulk gold is p.p.m. °C Cited by: Solar Cells, 20 () - ON THE ORIGIN OF THE SHUNT EFFECT IN POLYCRYSTALLINE GALLIUM ARSENIDE pn-JUNCTION DEVICES MARKUS B()HM* and ALLEN M.
BARNETT Department of Electrical Engineering, University of Delaware, Newark, DE (U.S.A.) (Received Febru ; accepted in revised form J ) Summary pn-Junction diodes Cited by: 3.
GaAs thin films with Ti incorporated, to which we refer to as GaAs(Ti), have been deposited by R.F. sputtering on fused silica and c-GaAs substrates under different process conditions. Applied Surface Science 38 () North-Holland. Amsterdam PLASMA ENHANCED CVD OF TUNGSTEN: SOME KINETIC RESULTS J.
WOOD Department of Electronics, University of York, York YOI 3DD, UK Received 20 March ; accepted for publication 23 March Thin tungsten ffl~s have been deposited onto tungsten, silicon and gallium arsanide substrates from WF6 using Cited by: 5. Gallium arsenide films of mu.m or less thickness deposited on tungsten/graphite substrates exhibit, in most cases, pronounced shunting effects in large area MOS solar cells due to grain boundaries.
Comments. Film: prepaired by ALD, nm TiO Ratzsch et al. Nanotechnol (). Measurement: ellipsometer Jobin Yvon UVISEL2 VUV: eV; ellipsometer Jobin Yvon UVISEL: eV; ellipsometer Woollam IRVASE: cm-1; spectrophotometer McPhersom VUVas eV; spectrophotometer Perkin Elmer Lambda eV.
Abstract. Process of making thin film materials for high efficiency solar cells on low-cost silicon substrates.
The process comprises forming a low-cost silicon substrate, forming a graded transition region on the substrate and epitaxially growing a thin gallium arsenide film. Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts = 25– °C).
The structural characteristics and optical properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS), and Cited by: 0 50 0 50 W (Tungsten) Ordal et al.
n,k µm. n k LogX LogY eV. Derived optical constants. Relative permittivity (dielectric constants) [ i ] [ i ] Absorption coefficient [ i ] [ i ] α = e+5 cm Abbe number [ i ] Chromatic dispersion [ i ] dn/dλ = µm Optical constants of GaN (Gallium nitride) Kawashima et al.
thin film; n,k µm. American Elements manufactures high purity single crystal Gallium Arsenide Wafers for optoelectronics applications. Our standard wafer diameters range from mm (1 inch) to mm ( inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants.
Thin‐film homojunction gallium arsenide solar cells of p + /n/n + configuration have been deposited on tungsten coated graphic substrates by the reaction of gallium, hydrogen chloride, and arsine containing appropriate dopants. Solar cells of 8‐cm 2 area with an AM1 efficiency of Cited by: 4.
T1 - Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films. AU - Alharbi, Abdullah. AU - Shahrjerdi, Davood. PY - /8/1. Y1 - /8/1. N2 - Flexible electronics based on the otherwise rigid conventional crystalline semiconductors is emerging as a new class of by: 1.
Sputtered Metal films available on Silicon wafers up to mm on substrates in stock and ready to ship. Vacuum Thin-Film Depositon Gallium Arsenide (GaAs) Wafers. Indium Gallium Arsenide (InGaAs) Heterojunction Bipolar Transistor. A thin film is a layer of material ranging from fractions of a nanometer to several micrometers in thickness.
The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface.
nm monolayer deposited on BK7 substrate using the magnetron sputtering technique. References. Lemarchand, private communications (). Measurement method described in: L.
Gao, F. Lemarchand, and M. Lequime. Exploitation of multiple incidences spectrometric measurements for thin film reverse engineering, Opt. Expr n_absolute: true wavelength_vacuum: true film_thickness: 1L substrate: Al2O3 Comments. CVD-grown monolayer; Room temperature.
References. G.-H. Jung, S. Yoo, Q-H. Park. Measuring the optical permittivity of two-dimensional materials without a priori knowledge of electronic transitions, Nanophotonics 8, () - see Supplementary. Gallium is a chemical element with the symbol Ga and atomic number Elemental gallium is a soft, silvery blue metal at standard temperature and pressure; however in its liquid state it becomes silvery too much force is applied, the gallium may fracture is in group 13 of the periodic table, and thus has similarities to the other metals of the group, aluminium, indium Pronunciation: /ˈɡæliəm/ (GAL-ee-əm).
substrates wafer manufacturer/supplier, China substrates wafer manufacturer & factory list, find qualified Chinese substrates wafer manufacturers, suppliers, factories, exporters & wholesalers quickly on Thin Film Substrate Crytstal Material Powder Products.
Sputtering Targets Industries Optics Solar Electronics Fabmate®, Graphite, Tungsten: Cr Plated W Rods: W: W: VitC: DC: Films very adherent. High rates possible. Gallium Arsenide: GaAs: Purity requirements for the raw materials used to produce gallium arsenide are stringent.
For optoelectronic devices (light-emitting diodes (LEDs), laser diodes, photo-detectors, solar cells), the gallium and arsenic must be at least % pure; for integrated circuits, a purity of % is required.
These purity levels are referred to by several names: %-pure gallium is often. Gallium(III) trioxide is an inorganic compound with the formula Ga 2 O exists as several polymorphs, all of which are white, water-insoluble gh no commercial applications exist, Ga 2 O 3 is an intermediate in the purification of gallium, which is consumed almost exclusively as gallium ance: white crystalline powder.
Thin Film Service Send us your wafer specs and quantity for an immediate quote. Indium Tim Oxide (ITO) - Float Zone Silicon - LiNbO3 - InGaAs - Nitride on Silicon - Aluminum - Silicon Carbide (SiC) -. The team originally described its controlled spalling technique back in and has already used the technique to successfully fabricate thin layers of silicon, germanium, gallium arsenide, gallium nitride/sapphire, and amorphous materials.
And because the technique is performed at room temperature and “can be applied at nearly any time in the fabrication flow, from starting materials to.A variety of thin film deposition methods are used to produce the various battery components.
Thin-film solar cells. Thin-film solar cells composed of materials such as copper indium gallium selenide (CIGS), cadmium telluride (CdTe), and amorphous silicon (a-Si) are cheaper alternatives to bulk crystalline silicon-based solar cell technologies.The use of thin, low-temperature AlN 8 and, later, GaN 9 buffer layers facilitated the growth of high-quality GaN films, specular and free of cracks, on sapphire substrates by metalorganic chemical vapor deposition (MOCVD).
Simultaneously, remarkable improvements in the electrical and optical properties were demonstrated.